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MSG36E41

Features: • Compatible between high breakdown voltage and high cut-off frequency• Low noise, high-gain amplification• Two elements incorporated into one package (Each transistor is separated)• Reduction of the mounting area and assembly cost by one halfSpecifications ...

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MSG36E41: Features: • Compatible between high breakdown voltage and high cut-off frequency• Low noise, high-gain amplification• Two elements incorporated into one package (Each transistor is...

MSG36E41 Data Sheet

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Part Number:
MSG36E41
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Compatible between high breakdown voltage and high cut-off frequency
• Low noise, high-gain amplification
• Two elements incorporated into one package (Each transistor is separated)
• Reduction of the mounting area and assembly cost by one half


Specifications

Parameter
Symbol
Rating
Unit
Tr1 Collector-basevoltage(Emitteropen)
VCBO
9
V
Collector-emitter voltage
VCEO
6
V
Emitter-base voltage(Collector open)
VEBO
1
V
Collector current
IC
100
mA
Tr2 Collector-base voltage (Emitter open)
VCBO
9
V
Collector-emitter voltage (Base open)
VCEO
6
V
Emitter-base voltage(Collector open)
VEBO
1
V
Collector current
IC
30
mA
Overall Total power dissipation
PT
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Note: Copper plate at the collector is 5.0 cm2 on substrate at 10 mm × 12 mm × 0.8 mm.


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