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Part Number: MSM514400E
Description: The MSM514400E is a 1,048,576-word * 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS tec...


Description: The MSM514400E is a 1,048,576-word * 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS tec...
The MSM514400E is a 1,048,576-word * 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514400E achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM514400E is available in a 26/20-pin plastic SOJ, 26/20-pin plastic TSOP.
|
Parameter |
Symbol |
Rating |
Unit |
| Voltage on Any Pin Relative to VSS |
VIN, VOUT |
0.5 to VCC + 0.5 |
V |
| Voltage on VCC Supply Relative to VSS |
VCC |
0.5 to 7 |
V |
| Short Circuit Output Current |
IOS |
50 |
mA |
| Power Dissipation |
PD* |
1 |
W |
| Operating Temperature |
Topr |
0 to 70 |
|
| Storage Temperature |
Tstg |
55 to 150 |
· 1,048,576-word × 4-bit configuration
· Single 5V power supply, ± 10% tolerance
· Input : TTL compatible, low input capacitance
· Output : TTL compatible, 3-state
· Refresh : 1024 cycles/16 ms
· Fast page mode, read modify write capability
· CAS before RAS refresh, hidden refresh, RAS -only refresh capability
· Multi-bit test mode capability
· Package options:
26/20-pin 300mil plastic SOJ (SOJ26/20-P-300-1.27) (Product : MSM514400E-xxSJ)
26/20-pin 300mil plastic TSOP (TSOPII26/20-P-300-1.27-K) (Product : MSM514400E-xxTS-K)
xx indicates speed rank.
MSM514400E
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