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Part Number: MSM514400E

 

 

 

 

Description: The MSM514400E is a 1,048,576-word * 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS tec...


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MSM514400E General Description


The MSM514400E is a 1,048,576-word  * 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514400E achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM514400E is available in a 26/20-pin plastic SOJ, 26/20-pin plastic TSOP.

MSM514400E Maximum Ratings

Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
VIN, VOUT
0.5 to VCC + 0.5
V
Voltage on VCC Supply Relative to VSS
VCC
0.5 to 7
V
Short Circuit Output Current
IOS
50
mA
Power Dissipation
PD*
1
W
Operating Temperature
Topr
0 to 70
Storage Temperature
Tstg
55 to 150

MSM514400E Features

· 1,048,576-word × 4-bit configuration
· Single 5V power supply, ± 10% tolerance
· Input : TTL compatible, low input capacitance
· Output : TTL compatible, 3-state
· Refresh : 1024 cycles/16 ms
· Fast page mode, read modify write capability
· CAS before RAS refresh, hidden refresh, RAS -only refresh capability
· Multi-bit test mode capability
· Package options:
    26/20-pin 300mil plastic SOJ    (SOJ26/20-P-300-1.27)         (Product : MSM514400E-xxSJ)
    26/20-pin 300mil plastic TSOP (TSOPII26/20-P-300-1.27-K) (Product : MSM514400E-xxTS-K)
                                                                                                              xx indicates speed rank.

MSM514400E Connection Diagram

MSM514400E  Connection Diagram

MSM514400E datasheet

MSM514400E
PDF/DataSheet Download

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