Features: • 1,048,576-word x1-bit configuration• Single 3.3 V power supply, ±0.3 V tolerance• Input : LVTTL compatible, low input capacitance• Output : LVTTL compatible, 3-state• Refresh : 512 cycles/8 ms• Fast page mode, read modify write capability•CAS b...
MSM51V1000A: Features: • 1,048,576-word x1-bit configuration• Single 3.3 V power supply, ±0.3 V tolerance• Input : LVTTL compatible, low input capacitance• Output : LVTTL compatible, 3-st...
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Features: · 1,048,576-word × 1-bit configuration· Single 5 V power supply, ±10% tolerance· Input :...
Features: • 1,048,576-word ´ 16-bit configuration• Single 5 V power supply, ±10%...
• 1,048,576-word x1-bit configuration
• Single 3.3 V power supply, ±0.3 V tolerance
• Input : LVTTL compatible, low input capacitance
• Output : LVTTL compatible, 3-state
• Refresh : 512 cycles/8 ms
• Fast page mode, read modify write capability
• CAS before RAS refresh, hidden refresh, RAS-only refresh capability
• Package options:
- 26/20-pin 300 mil plastic SOJ (SOJ26/20-P-300-1.27) (Product : MSM51V1000A-xxJS)
- 20-pin 400 mil plastic ZIP (ZIP20-P-400-1.27) (Product : MSM51V1000A-xxZS) xx indicates speed rank.

| Parameter | Symbol | Rating | Unit |
| Voltage on any pin relative to Vss | VT | -0.5 to +4.6 | V |
| Short circuit current | IOS | 50 | mA |
| Power dissipation | PD* | 1 | W |
| Operating temperature | Topr | 0 to 70 | °C |
| Storage temperature | Tstg | - 55 to 150 | °C |
*: Ta=25°C
The MSM51V1000A is a 1,048,576-word x 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V1000A achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer metal CMOS process. The MSM51V1000A is available in a 26/20-pin plastic SOJ or 20-pin plastic ZIP.