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Part Number: MSM548512L
Description: The MSM548512L is fabricated using OKI's CMOS silicon gate process technology. This process,coupled wi...


Description: The MSM548512L is fabricated using OKI's CMOS silicon gate process technology. This process,coupled wi...
The MSM548512L is fabricated using OKI's CMOS silicon gate process technology. This process,coupled with single-transister memory storage cells, permits maximum circuit density, minimum chip size and high speed.
MSM548512L has Self-refresh mode in addition to Address-refresh mode and Auto-refresh mode. In the Self-refresh mode the internal refresh timer and address counter refresh the dynamic memory cells automatically. This series allows low power consumption when using standby mode with Self-refresh.
The MSM548512L also features a static RAM-like write function that writes the data into the memory cell at the rising edge of WE.
|
Parameter |
Symbol |
Rating |
Unit |
| Voltage on Any Pin from VSS *1 |
VT |
1.0 to 7.0 |
V |
| Power Dissipation |
PD |
1.0 |
W |
| Operating Temperature |
Topr |
0 to 70 |
°C |
| Storage Temperature |
Tstg |
55 to 125 |
°C |
| Storage Temperature (biased) |
Tbias |
10 to 85 |
°C |
| Short Circuit Output Current |
IOS |
50 |
mA |
*1 To VSS
Note: 1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
MSM548512L
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