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Part Number: MSM54V24616

 

 

 

 

Description: The MSM54V24616 is a 131,072-word × 16-bit × 2-ban...


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MSM54V24616 General Description


The MSM54V24616 is a 131,072-word × 16-bit × 2-bank synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible. This device can operate up to 125MHz by using synchronous interface.

MSM54V24616 Maximum Ratings

Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
VIN,VOUT
0.5 to 4.6
V
VCC Supply Voltage
VCC,VCCQ
0.5 to 4.6
V
Power Dissipation
PD*
1
W
Short Circuit Current
IOS
50
mA
Operating Temperature
Topr
0 to 70
°C
Storage Temperature
Tstg
55 to 150
°C
*: Ta = 25°C

MSM54V24616 Features

• 131,072-words × 16-bit × 2 banks configuration
• Single 3.3 V±10% power supply
• LVTTL compatible inputs and outputs
• All input signals are latched at rising edge of system clock
• Auto precharge and controlled precharge
• Internal pipelined operation: column address can be changed every clock cycle
• Dual internal banks controlled by A9 (Bank Address: BA)
• Independent byte operation via DQML and DQMU
• Programmable burst sequence (Sequential / Interleave)
• Programmable burst length (1, 2, 4, 8 and full page)
• Programmable CAS latency (1, 2 and 3)
• Programmable Write burst (Burst write / Single write)
• Burst stop function (full-page burst)
• Power Down operation and Active Power Down (Clock Suspend) operation
• Auto refresh and Self refresh capability
• Refresh period: 1,024 cycles / 16 ms
• Package options:
  50-pin plastic TSOP (type II) (TSOPII50-P-400-0.80-K) (Product : MSM54V24616-xxTS-K)
                                                                                        xx indicates speed rank.

MSM54V24616 Connection Diagram

MSM54V24616  Connection Diagram

MSM54V24616 datasheet

MSM54V24616
PDF/DataSheet Download

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