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Part Number: MSM56V16400D

 

 

 

 

Description: The MSM56V16400D/DH is a 2-bank × 2,097,152-word ×...


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MSM56V16400D General Description


The MSM56V16400D/DH is a 2-bank × 2,097,152-word × 4-bit synchronous dynamic RAM,fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.

MSM56V16400D Maximum Ratings

Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
VIN,VOUT
0.5 VCCto 0.5
V
VCC Supply Voltage
VCC,VCCQ
0.5 to 4.6
V
Power Dissipation
PD*
600
mW
Short Circuit Current
IOS
50
mA
Operating Temperature
Topr
0 to 70
°C
Storage Temperature
Tstg
55 to 150
°C
*: Ta = 25°C

MSM56V16400D Features

• Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
• 2-bank * 2,097,152-word ´ 4-bit configuration
• 3.3 V power supply, ±0.3 V tolerance
• Input : LVTTL compatible
• Output : LVTTL compatible
• Refresh : 4096 cycles/64 ms
• Programmable data transfer mode
  CAS latency (1, 2, 3)
  CAS latency (2, 3)*1
  Burst length (1, 2, 4, 8, full page)
  Burst length (1, 2, 4, 8)*1
  Data scramble (sequential, interleave)
   *1 : H version only.
• CBR auto-refresh, Self-refresh capability
• Package:
  44-pin 400 mil plastic TSOP (Type II) (TSOPII44-P-400-0.80-K) (Product : MSM56V16400D/DH-xxTS-K)
   xx indicates speed rank.

MSM56V16400D Connection Diagram

MSM56V16400D  Connection Diagram

MSM56V16400D datasheet

MSM56V16400D
PDF/DataSheet Download

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