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MFG:11000  Package Cooled:OKI  

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Part Number: MSM56V16800DH

 

MFG: 11000

Package Cooled: OKI

 

Description: The MSM56V16800D/DH is a 2-bank ×1,048,576-word ×8-bit synchronous dynamic RAM,fabricated in Oki's CMO...


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MSM56V16800DH General Description


The MSM56V16800D/DH is a 2-bank ×1,048,576-word ×8-bit synchronous dynamic RAM,fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.

MSM56V16800DH Maximum Ratings

Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
VIN, VOUT
-0.5 to VCC +0.5
V
VCC Supply Voltage
VCC, VCCQ
-0.5 to 4.6
V
Storage Temperature
Tstg
-55 to 150
°C
Power Dissipation
PD*
600
mW
Short Circuit Current
IOS
50
mA
Operating Temperature
Topr
0 to 70
°C

*: Ta = 25°C

MSM56V16800DH Features

•Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
•2-bank * 1,048,576-word * 8-bit configuration
•3.3 V power supply, ±0.3 V tolerance
•Input: LVTTL compatible
•Output: LVTTL compatible
•Refresh: 4096 cycles/64 ms
•Programmable data transfer mode
  CAS atency (1, 2, 3)
  CAS latency (2, 3)*1
  Burst length (1, 2, 4, 8, full page)
  Burst length (1, 2, 4, 8)*1
  Data scramble (sequential, interleave)*1
    1: H version only.
•CBR auto-refresh, Self-refresh capability
•Package:
44-pin 400 mil plastic TSOP (Type II)(TSOPII44-P-400-0.80-K)   (Product : MSM56V16800D/DH-xxTS-K)
                                                                                                  xx indicates speed rank.

MSM56V16800DH Connection Diagram

MSM56V16800DH Connection Diagram

MSM56V16800DH Connection Diagram

MSM56V16800DH datasheet

MSM56V16800DH
PDF/DataSheet Download

  • Datasheet: MSM56V16800DH
  • File Size: 348325 KB
  • Manufacturer: OKI [OKI electronic componets]
  • Click here to Download

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Related Part Number

MSM56V16800DH Relative Products

  • MSM56V16800D

    MSM56V16800D

    The MSM56V16800D/DH is a 2-bank ×1,048,576-word ×8-bit synchronous dynamic RAM,fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.

  • MSM56V16400DH

    MSM56V16400DH

    The MSM56V16400DH is a 2-bank × 2,097,152-word × 4-bit synchronous dynamic RAM,fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.

  • MSM56V16400D

    MSM56V16400D

    The MSM56V16400D/DH is a 2-bank × 2,097,152-word × 4-bit synchronous dynamic RAM,fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.

  • MSM56V16160F

    MSM56V16160F

    The MSM56V16160F is a 2-Bank *524,288-word*16 bit Synchronous dynamic RAM, fabricated in OKI's CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL compatible.

  • MSM56V16160DH

    MSM56V16160DH

    The MSM56V16160DH is a 2-bank ×524,288-word×16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.

  • MSM56V16160D

    MSM56V16160D

    The MSM56V16160D/DH is a 2-bank ×524,288-word×16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.

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