Purchase MSM5718C50, In-stock MSM5718C50 From SeekIC.
MFG:11000 Package Cooled:OKI
Part Number: MSM5718C50
MFG: 11000
Package Cooled: OKI
Description: The 18/64-Megabit Concurrent Rambus™ DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs orga...
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MSM5718C50
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DataSheet
General Description
MSM5718C50 General Description
The 18/64-Megabit Concurrent Rambus™ DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns per byte (13.3 ns per eight bytes). The use of Rambus Signaling Level (RSL) technology permits 600 MHz transfer rates while using conventional system and board design methodologies. Low effective latency is attained by operating the two or four 2KB sense amplifiers as high speed caches, and by using random access mode (page mode) to facilitate large block transfers. Concurrent (simultaneous) bank operations permit high effective bandwidth using interleaved transactions.
RDRAMs are general purpose high-performance memory devices suitable for use in a broad range of applications including PC and consumer main memory, graphics, video, and any other application where high-performance at low cost is required.
MSM5718C50 Maximum Ratings
|
Symbol |
Parameter |
Min. |
Max. |
Unit |
|
V I,ABS |
Voltage applied to any RSL pin with respect to Gnd |
0.3 |
V DD,MAX+0.3 |
V |
|
V I,CMOS,ABS |
Voltage applied to any CMOS pin with respect to Gnd |
0.3 |
V DD+0.3 |
V |
|
V DD,ABS |
Voltage on VDD with respect to Gnd |
0.3 |
VDD,MAX+1.0 |
V |
|
T J,ABS |
Junction temperature under bias |
55 |
125 |
°C |
|
T STORE |
Storage temperature |
55 |
125 |
°C |
MSM5718C50 Features
• Compatible with Base RDRAMs
• 600 MB/s peak transfer rate per RDRAM
• Rambus Signaling Level (RSL) interface
• Synchronous, concurrent protocol for block-oriented, interleaved (overlapped) transfers
• 480 MB/s effective bandwidth for random 32 byte transfers from one RDRAM
• 13 active signals require just 32 total pins on the controller interface (including power)
• 3.3 V operation
• Additional/multiple Rambus Channels each provide an additional 600 MB/s bandwidth
• Two or four 2KByte sense amplifiers may be operated as caches for low latency access
• Random access mode enables any burst order at full bandwidth within a page
• Graphics features include write-per-bit and mask-per-bit operations
• Available in horizontal surface mount plastic package (SHP32-P-1125-0.65-K)
• 600 MB/s peak transfer rate per RDRAM
• Rambus Signaling Level (RSL) interface
• Synchronous, concurrent protocol for block-oriented, interleaved (overlapped) transfers
• 480 MB/s effective bandwidth for random 32 byte transfers from one RDRAM
• 13 active signals require just 32 total pins on the controller interface (including power)
• 3.3 V operation
• Additional/multiple Rambus Channels each provide an additional 600 MB/s bandwidth
• Two or four 2KByte sense amplifiers may be operated as caches for low latency access
• Random access mode enables any burst order at full bandwidth within a page
• Graphics features include write-per-bit and mask-per-bit operations
• Available in horizontal surface mount plastic package (SHP32-P-1125-0.65-K)
MSM5718C50 Connection Diagram
MSM5718C50
PDF/DataSheet Download
- Datasheet: MSM5718C50
- File Size: 562809 KB
- Manufacturer: OKI [OKI electronic componets]
- Click here to Download
- ·MSM10S0000
- OKI [OKI electronic componets]
- 0.8um CMOS
- 48604 KB
- ·MSM13Q
- OKI [OKI electronic componets]
- 0.35 レm Sea of Gates Arrays
- 232838 KB
- ·MSM14Q000
- OKI [OKI electronic componets]
- 0.35 レm Sea of Gates Arrays
- 232838 KB
- ·MSM27C1602CZ
- OKI [OKI electronic componets]
- 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM
- 111107 KB
- ·MSM27C1652CZ
- OKI [OKI electronic componets]
- 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
- 93703 KB
- ·MSM27C1655CZ
- OKI [OKI electronic componets]
- 524,288-Double Word x 32-Bit or 1,048,576-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM
- 93258 KB
- ·MSM27C3202CZ
- OKI [OKI electronic componets]
- 2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit One Time PROM
- 89388 KB
- ·MSM27C3252CZ
- OKI [OKI electronic componets]
- 2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
- 92532 KB
MSM5718C50 Relative Products
MSM5718B70
The 18-Megabit Rambus™ DRAM (RDRAM™) MSM5718B70is an extremely high-speed CMOS DRAM organized as 2M words by 9 bits. It is capable of bursting up to 256 bytes of data at less than 2 nanoseconds per byte. The use of Rambus Signaling Logic (RSL) te...
MSM56V16800F
The MSM56V16800F is a 2-Bank *1,048,576-word* 8 bit Synchronous dynamic RAM, fabricated in OKI's CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL compatible.
MSM56V16800E
The MSM56V16800E is a 2-bank ×1,048,576-word ×8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.
MSM56V16800DH
The MSM56V16800DH is a 2-bank ×1,048,576-word ×8-bit synchronous dynamic RAM,fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.
MSM56V16800D
The MSM56V16800D/DH is a 2-bank ×1,048,576-word ×8-bit synchronous dynamic RAM,fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.
MSM56V16400DH
The MSM56V16400DH is a 2-bank × 2,097,152-word × 4-bit synchronous dynamic RAM,fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.
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