MT28C3212P2NFL

The MT28C3212P2FL and MT28C3212P2NFL combination Flash and SRAM memory devices provide a compact, low-power solution for systems where PCB real estate is at a premium. The dual-bank Flash is a high performance, high-density, nonvolatile memory device with a revolutionary architecture that can significantly improve system performance.

This new architecture features:

• A two-memory-bank configuration supporting
   dual-bank burst operation;

• A high-performance bus interface providing a fast
   page data transfer; and

• A conventional asynchronous bus interface.

The device also provides soft protection for blocks by configuring soft protection registers with dedicated command sequences. For security purposes, dual 64- bit chip protection registers are provided.

The embedded WORD WRITE and BLOCK ERASE functions are fully automated by an on-chip write state machine (WSM). The WSM simplifies these operations and relieves the system processor of secondary tasks. An on-chip status register, one for each bank, can be used to monitor the WSM status to determine the progress of a PROGRAM/ERASE command.

The erase/program suspend functionality allows compatibility with existing EEPROM emulation software packages.

The device takes advantage of a dedicated power source for the Flash device (F_V_CC) and a dedicated power source for the SRAM device (S_V_CC), both at 1.65V1.95V or 1.80V2.20V for optimized power consumption and improved noise immunity. The MT28C3212P2FL and MT28C3212P2NFL devices support two V_PP voltage ranges, V_PP1 and V_PP2. V_PP1 is an incircuit voltage of 0.9V2.2V (MT28C3212P2FL) or 0.0V 2.2V (MT28C3212P2NFL). V_PP2 is the production compatibility voltage of 12V ±5%. The 12V ±5% V_PP2 is supported for a maximum of 100 cycles and 10 cumulative hours. See Table 1.

The MT28C3212P2FL and MT28C3212P2NFL devices contain an asynchronous 2Mb SRAM organized as 128K-words by 16 bits. These devices are fabricated using an advanced CMOS process and high-speed/ ultra-low-power circuit technology.

The MT28C3212P2FL and MT28C3212P2NFL devices are packaged in a 66-ball FBGA package with 0.80mm pitch.