MT3S06U

The MT3S06U is a kind of silicon NPN planar epitaxial transistor for VHF-UHF band low noise amplifier applications. There are some features of MT3S06U as follows: (1)low noise figure: NF=1.6 dB (VCE=3 V, IC=3 mA, f=2 GHz); (2)high gain: |S21e|2=9.5 dB (VCE=3 V, IC=7 mA, f=2 GHz).

What comes next is about the absolute maximum ratings of MT3S06U: (1)collector to base voltage, VCBO: 10 V; (2)collector to emitter voltage, VCEO: 5 V; (3)emitter to base voltage, VEBO: 1.5 V; (4)collector current, IC: 15 mA; (5)base collector, IB: 7 mA; (6)collector power dissipation, PC: 60 mW; (7)junction temperature, Tj: 125; (8)storage temperature, Tstg: -55 to +125.

The following is about the electrical characteristics of MT3S06U at Ta=25: (1)collector cutoff current, ICBO: 0.1A max at VCB=5 V, IE=0; (2)emittor cutoff current, IEBO: 1A max at VEB=1 V, IC=0; (3)DC current gain, hFE: 70 min and 140 max at VCE=1 V, IC=5 mA; (4)reverse transfer capacitance, Cre: 0.25 pF typ and 0.7 pF max at VCB=1 V, f=1 MHz, IE=0. Then is about the microwave characteristics at Ta=25: (1)transition frequency, fT: 7 GHz min and 10 GHz typ at VCE=3 V, IC=5 mA; (2)insertion gain, |S21e|2: 8.5 dB typ at VCE=1 V, f=2 GHz, IC=5 mA; 6.5 dB min and 9.5 dB typ at VCE=3 V, f=2 GHz, IC=7 mA; (3)noise figure, NF: 1.7 dB typ and 3 dB max at VCE=1 V, f=2 GHz, IC=3 mA; 1.6 dB typ and 2.2 dB max at VCE=3 V, f=2 GHz, IC=3 mA.