MT48LC16M4A2

The Micron^® 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quad- bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4's 16,777,216-bit banks is orga- nized as 4,096 rows by 1,024 columns by 4 bits. Each of the x8's 16,777,216-bit banks is organized as 4,096 rows by 512 columns by 8 bits. Each of the x16's 16,777,216- bit banks is organized as 4,096 rows by 256 columns by 16 bits.

Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and con- tinue for a programmed number of locations in a pro- grammed sequence. Accesses begin with the registration of an ACTIVE command, which is then fol- lowed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0-A11 select the row). The ad- dress bits registered coincident with the READ or WRITE
command are used to select the starting column loca- tion for the burst access