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Part Number: MT58L256L18D1
Description: The Micron® SyncBurst™ SRAM family employs high-speed, low-power CMOS designs tha...
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MT58L256L18D1
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General Description
MT58L256L18D1 General Description
The Micron® SyncBurst™ SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process.
Micron's 4Mb SyncBurst SRAMs integrate a 256K x 18, 128K x 32, or 128K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input (CLK). The synchronous inputs include all addresses, all data inputs, active LOW chip enable (CE#), two additional chip enables for easy depth expansion (CE2, CE2#), burst control inputs (ADSC#, ADSP#, ADV#), byte write enables (BWx#) and global write (GW#).
MT58L256L18D1 Maximum Ratings
Voltage on VDD Supply
Relative to VSS ............................... -0.5V to +4.6V
Voltage on VDDQ Supply
Relative to VSS ............................... -0.5V to +4.6V
VIN .......................................... -0.5V to VDDQ + 0.5V
Storage Temperature (plastic) ....... -55°C to +150°C
Junction Temperature** ............................... +150°C
Short Circuit Output Current ............................100mA
*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
**Maximum junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. See Micron Technical Note TN-05-14 for more information.
MT58L256L18D1 Features
• Fast clock and OE# access times
• Single +3.3V +0.3V/-0.165V power supply (VDD)
• Separate +3.3V isolated output buffer supply (VDDQ)
• SNOOZE MODE for reduced-power standby
• Common data inputs and data outputs
• Individual BYTE WRITE control and GLOBAL WRITE
• Three chip enables for simple depth expansion and address pipelining
• Clock-controlled and registered addresses, data I/Os and control signals
• Internally self-timed WRITE cycle
• Burst control pin (interleaved or linear burst)
• Automatic power-down for portable applications
• 165-pin FBGA package
• 100-pin TQFP package
• Low capacitive bus loading
• x18, x32, and x36 versions available
• Single +3.3V +0.3V/-0.165V power supply (VDD)
• Separate +3.3V isolated output buffer supply (VDDQ)
• SNOOZE MODE for reduced-power standby
• Common data inputs and data outputs
• Individual BYTE WRITE control and GLOBAL WRITE
• Three chip enables for simple depth expansion and address pipelining
• Clock-controlled and registered addresses, data I/Os and control signals
• Internally self-timed WRITE cycle
• Burst control pin (interleaved or linear burst)
• Automatic power-down for portable applications
• 165-pin FBGA package
• 100-pin TQFP package
• Low capacitive bus loading
• x18, x32, and x36 versions available
MT58L256L18D1 Connection Diagram
MT58L256L18D1
PDF/DataSheet Download
- Datasheet: MT58L256L18D1
- File Size: 1690095 KB
- Manufacturer: Micron Technology
- Click here to Download
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