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MTB10010U

Features: · Input prematching cell allows an easier design of circuits· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization realizes very good characteristics stability...

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SeekIC No. : 004430431 Detail

MTB10010U: Features: · Input prematching cell allows an easier design of circuits· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structu...

MTB10010U Data Sheet

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Part Number:
MTB10010U
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Input prematching cell allows an easier design of circuits
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Gold metallization realizes very good characteristics stability and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance.


Application

Common base class C narrowband pulsed power amplifiers at 1030 MHz for IFF applications.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 40 V
VCEO collector-emitter voltage open base - 15 V
VCES collector-emitter voltage RBE = 0 - 40 V
VEBO emitter-base voltage open collector - 3 V
IC collector current (average)   - 0.75 A
Ptot total power dissipation Tmb < 75 ; tp = 1 s;  = 1% - 36 W
Tstg storage temperature   - +200
Tj junction temperature   -65 20
Tsld soldering temperature t £ t  10 s; note 1 - 235



Description

NPN silicon planar epitaxial microwave transistor MTB10010U with internal input prematching cell in a SOT440A metal ceramic package with base connected to flange.




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