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MFG:MOTO  Package Cooled:03+  D/C:TO-263  

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Part Number: MTB3N120E

 

MFG: MOTO

Package Cooled: 03+

D/C: TO-263

Description: The D2PAK package has the capability of housing a larger die than any existing surface moun...


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MTB3N120E General Description


The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTB3N120E Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
1200
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
1200
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive (tp  10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current - Continuous
- Continuous @ 100
- Single Pulse (tp  10 s)
ID
ID
IDM
3.0
2.2
11
Adc
Apk
Total Power Dissipation @ 25
Derate above 25
Total Power Dissipation @ TA = 25 (1)
PD
125
1.0
2.5
Watts
W/
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL =4.5 Apk, L = 10 mH, RG = 25 )
EAS
101
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
- Junction to Ambient (1)
RJC
RJA
RJA
1.0
62.5
50
/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds
TL
260

(1) When surface mounted to an FR4 board using the minimum recommended pad size.
EFET and Designer's are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.

MTB3N120E Features

• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery time Comparable to Discrete Fast Recovery Diode
• See App. Note AN1327 Very Wide Input Voltage Range; Offline Flyback Switching Power Supply

MTB3N120E datasheet

MTB3N120E
PDF/DataSheet Download

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