MFG:ON Package Cooled:05+ D/C:TO-263
MFG: ON
Package Cooled: 05+
D/C: TO-263
Description: TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of stan...
TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
| Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
60 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
±20 ±25 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100 - Single Pulse (tp 10 s) |
ID ID IDM |
52 41 182 |
Adc Apk |
| Total Power Dissipation @ 25 Derate above 25 Total Power Dissipation @ TA = 25 (1) |
PD |
188 1.25 3.0 |
Watts W/ Watts |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
|
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25 (VDD = 25Vdc, VGS = 10 Vdc, Peak IL =52 Apk, L = 0.3 mH, RG = 25 ) |
EAS |
406 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient (1) |
RJC RJA RJA |
0.8 62.5 50 |
/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds |
TL |
260 |
MTB52N06V
PDF/DataSheet Download
MTB52N06D is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, MTB5...
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