Features: • Avalanche Energy Capability Specified at Elevated Temperature• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Low Stored Gate Charge for Efficient Switching• Internal SourcetoDrain Diode Designed to Replace External Zener Transie...
MTB55N06Z: Features: • Avalanche Energy Capability Specified at Elevated Temperature• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Low Stored Gate Charge fo...
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Features: New Features of TMOS V• Onresistance Area Product about Onehalf that of Standard M...
Rating |
Symbol |
Value |
Unit |
DraintoSource Voltage |
VDSS |
60 |
Vdc |
DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
±20 ±40 |
Vdc Vpk |
Drain Current - Continuous - Continuous @ 100 - Single Pulse (tp 10 s) |
ID ID IDM |
55 35.5 165 |
Adc Apk |
Total Power Dissipation @ 25 Derate above 25 Total Power Dissipation @ TA = 25 (1) |
PD |
113 0.91 2.5 |
Watts W/ Watts |
Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
|
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25 (VDD = 25 Vdc, VDS = 60 Vdc, VGS = 10 Vdc, Peak IL = 55 Apk, L = 0.3 mH, RG = 25 ) |
EAS |
454 |
mJ |
Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient (1) |
RJC RJA RJA |
1.1 62.5 50 |
/W |
Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds |
TL |
260 |
The MTB55N06Z is designed to withstand high energy in the avalanche mode and switch efficiently. The MTB55N06Z also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.