Purchase MTB60N10E7, In-stock MTB60N10E7 From SeekIC.
- Table of contents:
MTB60N10E7
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Suppliers
DataSheet
General Description
MTB60N10E7 Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DrainSource Voltage |
VGSS |
100 |
Vdc |
| DrainGate Voltage (RGS = 1.0 M) |
VDGR |
100 |
Vdc |
| GateSource Voltage - Continuous - NonRepetitive (tp10 ms) |
VGS VGSM |
±20 ±30 |
|
| Drain - Continuous - Continuous @ 100°C - Single Pulse (tp10 s) |
ID ID IDM |
60 48 210 |
Adc |
| Total Power Dissipation Derate above 25°C |
PD |
242 1.61 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 175 |
°C |
| Single DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 75 V, VGS = 10 Vdc, IL = 60 A, L = 0.3 mH, RG = 25 ) |
EAS |
540 |
mJ |
| Thermal Resistance - Junction to Case - JunctiontoAmbient |
RJC RJA RJA |
0.62 62.5 50 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds |
TL |
260 |
°C |
MTB60N10E7 Features
New Features of TMOS 7
• Ultra Low OnResistance Provides Higher Efficiency
• Reduced Gate Charge
Features Common to TMOS 7 and TMOS EFETS
• Avalanche Energy Specified
• Diode Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Industry Standard D2PAK Surface Mount Package
• Surface Mount Package Available in 24 mm, 13inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
• Ultra Low OnResistance Provides Higher Efficiency
• Reduced Gate Charge
Features Common to TMOS 7 and TMOS EFETS
• Avalanche Energy Specified
• Diode Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Industry Standard D2PAK Surface Mount Package
• Surface Mount Package Available in 24 mm, 13inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
MTB60N10E7
PDF/DataSheet Download
- Datasheet: MTB60N10E7
- File Size: 191383 KB
- Manufacturer:
- Click here to Download
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