MFG:ON Package Cooled:05+ D/C:TO-252
MFG: ON
Package Cooled: 05+
D/C: TO-252
Description: This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation mod...
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Surface Mount Package Available in 16 mm, 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
• Available in Insertion Mount, Add 1 or 1 to Part Number
|
Rating |
Symbol |
Value |
Unit |
| DrainSource Voltage |
VGSS |
100 |
Vdc |
| DrainGate Voltage (RGS = 1.0 M) |
VDGR |
100 |
Vdc |
| GateSource Voltage - Continuous - NonRepetitive (tp 50 S) |
VGS VGSM |
±20 ±25 |
|
| Drain - Continuous - Continuous @ 100°C - Single Pulse (tp10 s) |
ID ID IDM |
14 10 49 |
Adc Apk |
| Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size |
PD |
72 0.58 1.75 |
Watts W/°C Watts |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 150 |
°C |
MTD14N10E/D
PDF/DataSheet Download
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