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MTD1P40E

Specifications Rating Symbol Value Unit DrainSource Voltage VGSS 400 Vdc DrainGate Voltage (RGS = 1.0 M) VDGR 400 Vdc GateSource Voltage- Continuous- NonRepetitive (tp50s) VGSVGSM ±20±25 VdcVpk Drain - Continuous- Continuous @ 100°C- Single ...

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SeekIC No. : 004430540 Detail

MTD1P40E: Specifications Rating Symbol Value Unit DrainSource Voltage VGSS 400 Vdc DrainGate Voltage (RGS = 1.0 M) VDGR 400 Vdc GateSource Voltage- Continuous- NonRe...

MTD1P40E Data Sheet

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Part Number:
MTD1P40E
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Rating
Symbol
Value
Unit
DrainSource Voltage
VGSS
400
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
400
Vdc
GateSource Voltage
- Continuous
- NonRepetitive (tp50s)

VGS
VGSM

±20
±25


Vdc
Vpk

Drain - Continuous
- Continuous @ 100°C
- Single Pulse (tp10 s)
ID
ID
IDM
1.0
0.8
3.5

Adc

Apk

Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size
PD
65
0.53
1.75
Watts
W/°C
Watts
Operating and Storage Temperature Range
TJ,Tstg
55 to 150
°C



Description

The MTD1P40E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation mode. The new energy efficient design also offers a draintosoure diode with fast recovery time. Designed for high converters and PWM motor controls, the MTD1P40E is particularly well suited for low power flourescent lighting applications where VDSS and RDS(on) have been optimized for use with complimentary NChannel devices.
• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits




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