MFG:N/A Package Cooled:NA/ D/C:09+
MFG: N/A
Package Cooled: NA/
D/C: 09+
Description: This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation m...
This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
|
Rating |
Symbol |
Value |
Unit |
| DrainSource Voltage |
VGSS |
30 |
Vdc |
| DrainGate Voltage (RGS = 1.0 M) |
VDGR |
30 |
Vdc |
| GateSource Voltage - Continuous - NonRepetitive (tp10ms) |
VGS VGSM |
±15 ±20 |
|
| Drain - Continuous - Continuous @ 100°C - Single Pulse (tp10 s) |
ID ID IDM |
19 12 57 |
Adc Apk |
| Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size |
PD |
75 0.6 1.75 |
Watts W/°C Watts |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 150 |
°C |
| Single DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 19 Apk, L = 1.1 mH, RG = 25) |
EAS |
200 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient,when mounted with the minimum recommended pad size |
RJC RJA RJA |
1.67 100 71.4 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds |
TL |
260 |
°C |
MTD20P03HDL
PDF/DataSheet Download
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