MFG:ON Package Cooled:05+ D/C:TO-252
MFG: ON
Package Cooled: 05+
D/C: TO-252
Description: This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without deg...
| Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
500 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
500 |
Vdc |
| GatetoSource Voltage - Continuous GatetoSource Voltage - Nonrepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
2.0 1.5 6.0 |
Adc Apk |
| Total Power Dissipation Derate above 25°C Total Power Dissipation @ 25°C,when mounted to minimum recommended pad size |
PD |
40 0.32 1.75 |
Watts W/°C Watts |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy - STARTING TJ = 25°C (VDD = 75 Vdc, VGS = 10Vdc, PEAK IL =2.0Apk, L = 50mH, RG = 25) |
EAS |
100 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient,when mounted to minimum recommended pad size |
RJC RJA RJA |
3.13 100 71.4 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
MTD2N50E
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