MFG:FAIRC Package Cooled:TO-252(DPAK) D/C:09+
MFG: FAIRC
Package Cooled: TO-252(DPAK)
D/C: 09+
Description: TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. Thi...
| Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
60 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GatetoSource Voltage - Continuous GatetoSource Voltage - Nonrepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 25 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
12 7.3 37 |
Adc Apk |
| Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size |
PD |
48 0.32 1.75 |
Watts W/°C Watts |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy - STARTING TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL =12Apk, L = 1.0mH, RG = 25) |
EAS |
72 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient, when mounted to minimum recommended pad size |
RJC RJA RJA |
3.13 100 71.4 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
MTD3055V
PDF/DataSheet Download
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