MTD3302

Features:

• Characterized Over a Wide Range of Power Ratings
• Ultralow R_DS(on) Provides Higher Efficiency and Extends Battery Life in Portable Applications
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I_DSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Industry Standard DPAK Surface Mount Package


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	30	Vdc
DraintoGate Voltage	VDGR	30	Vdc
GatetoSource Voltage	VGS	± 20	Vdc
Operating and Storage Junction Temperature Range	TJ, Tstg	55 to +150	°C
Single Pulse DraintoSource Avalanche Energy - STARTING TJ = 25°C (VDD =25 Vdc, VGS = 10Vdc, L =126mH, IL(pk) = 3.0 A, VDS = 30 Vdc)	EAS	500	MJ

Description

MTD3302 is an advanced series of power MOSFETs which utilize Motorola's latest MOSFET technology process to achieve the lowest possible onresistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. WaveFETE devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. The MTD3302 can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.