MTD6N20ET4

MOSFET 200V 6A N-Channel

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SeekIC No. : 00166695 Detail

MTD6N20ET4: MOSFET 200V 6A N-Channel

floor Price/Ceiling Price

Part Number:
MTD6N20ET4
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 700 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 700 mOhms


Parameters:

Technical/Catalog InformationMTD6N20ET4
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs700 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 480pF @ 25V
Power - Max1.75W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs21nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MTD6N20ET4
MTD6N20ET4
MTD6N20ET4OSDKR ND
MTD6N20ET4OSDKRND
MTD6N20ET4OSDKR



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