MTH8N90

The MTH8N90 is a kind of TMOS field effect transistor. The MTH8N90 is N-channel enhancement-mode. The device is intended for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. There are some features as follows: (1)silicon gate for fast switching speeds: switching times specified at 100 ; (2)designer's data: IDSS, VDS(on), VGS(th) and SOA specified at elevated temperature; (3)SOA is power dissipation limited; (4)source-to-drain diode characterized for use with inductive loads.

What comes next is about the maximum ratings of MTH8N90: (1)drain-source voltage, VDSS: 900 V; (2)drain-gate voltage (RGS=1 M), VDGR: 900 V; (3)gate-source voltage, continuous, VGS: ±20 V; (4)gate-source voltage, non-repetitive (tp50s), VGSM: ±40 V; (5)drain current, continuous, ID: 8 A; (6)drain current, pulsed, IDM: 22 A; (7)total power dissipation, PD: 180 W; (8)operating and storage temperature range, TJ, TSTG: -65 to 150. Then is about the thermal characteristics: (1)thermal resistance, junction to case, RJC: 0.7/W; (2)thermal resistance, junction to ambient, RJC: 30/W; (3)maximum lead temperature for soldering purpose, 1/8 " from case for 5 seconds, TL: 275.

The following is about the electrical characteristics of MTH8N90 (TC=25 unless otherwise noted): (1)drain-source breakdown voltage, V(BR)DSS: 900 V min at VGS=0, ID=250A; (2)zero gate voltage drain current, IDSS: 250A max at VDS=rated VDSS, VGS=0 and 1000A max at VDS=0.8rated VDSS, VGS=0, TJ=125; (3)gate-body leakage current, forward, IGSSF: 100 nA max at VGSF=20 V, VDS=0  ; (4)gate-body leakage current, reverse, IGSSR: 100 nA max at VGSR=20 V, VDS=0 ; (5)gate threshold voltage, VGS(th): 2 V min and 4.5 V max at VDS=VGS, ID=1 mA, TJ=100; (6)static drain-source on-resistance, rDS(on): 1.8 Ohms max at VGS=10 V, ID=4 A; (7)drain-source on-voltage, VGS(on): 17 V max at ID=8 A and 15 A max at ID=4 A, TJ=100; (8)forward transconductance, gFS: 3 mhos max at VDS=15 V, ID=4 A.