MTH8N90

DescriptionThe MTH8N90 is a kind of TMOS field effect transistor.The MTH8N90is N-channel enhancement-mode. The device is intended for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. There are some features as follows: (1)s...

product image

MTH8N90 Picture
SeekIC No. : 004430602 Detail

MTH8N90: DescriptionThe MTH8N90 is a kind of TMOS field effect transistor.The MTH8N90is N-channel enhancement-mode. The device is intended for high voltage, high speed power switching applications such as sw...

floor Price/Ceiling Price

Part Number:
MTH8N90
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/29

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Description

The MTH8N90 is a kind of TMOS field effect transistor. The MTH8N90 is N-channel enhancement-mode. The device is intended for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. There are some features as follows: (1)silicon gate for fast switching speeds: switching times specified at 100 ; (2)designer's data: IDSS, VDS(on), VGS(th) and SOA specified at elevated temperature; (3)SOA is power dissipation limited; (4)source-to-drain diode characterized for use with inductive loads.

What comes next is about the maximum ratings of MTH8N90: (1)drain-source voltage, VDSS: 900 V; (2)drain-gate voltage (RGS=1 M), VDGR: 900 V; (3)gate-source voltage, continuous, VGS: ±20 V; (4)gate-source voltage, non-repetitive (tp50s), VGSM: ±40 V; (5)drain current, continuous, ID: 8 A; (6)drain current, pulsed, IDM: 22 A; (7)total power dissipation, PD: 180 W; (8)operating and storage temperature range, TJ, TSTG: -65 to 150. Then is about the thermal characteristics: (1)thermal resistance, junction to case, RJC: 0.7/W; (2)thermal resistance, junction to ambient, RJC: 30/W; (3)maximum lead temperature for soldering purpose, 1/8 " from case for 5 seconds, TL: 275.

The following is about the electrical characteristics of MTH8N90 (TC=25 unless otherwise noted): (1)drain-source breakdown voltage, V(BR)DSS: 900 V min at VGS=0, ID=250A; (2)zero gate voltage drain current, IDSS: 250A max at VDS=rated VDSS, VGS=0 and 1000A max at VDS=0.8rated VDSS, VGS=0, TJ=125; (3)gate-body leakage current, forward, IGSSF: 100 nA max at VGSF=20 V, VDS=0  ; (4)gate-body leakage current, reverse, IGSSR: 100 nA max at VGSR=20 V, VDS=0 ; (5)gate threshold voltage, VGS(th): 2 V min and 4.5 V max at VDS=VGS, ID=1 mA, TJ=100; (6)static drain-source on-resistance, rDS(on): 1.8 Ohms max at VGS=10 V, ID=4 A; (7)drain-source on-voltage, VGS(on): 17 V max at ID=8 A and 15 A max at ID=4 A, TJ=100; (8)forward transconductance, gFS: 3 mhos max at VDS=15 V, ID=4 A.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Inductors, Coils, Chokes
Static Control, ESD, Clean Room Products
Fans, Thermal Management
Programmers, Development Systems
Prototyping Products
DE1
Line Protection, Backups
View more