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MFG:MOTOROLA  Package Cooled:02+  D/C:220  

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Part Number: MTP10N10E

 

MFG: MOTOROLA

Package Cooled: 02+

D/C: 220

Description: This advanced "E" series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation mo...


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MTP10N10E General Description


This advanced "E" series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation modes. These new energy efficient devices also offer drainto source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical, and offer additional safety margin against unexpected voltage transients.

MTP10N10E Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
100
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
100
Vdc
GatetoSource Voltage
VGS
± 20
Vdc
Drain Current
- Continuous
- Pulsed
ID
IDM
10
5
Adc
Total Power Dissipation
Derate above 25°C
PD
75
0.6
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
65 to 150
°C

MTP10N10E Features

• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode - Unclamped Inductive Switching (UIS) Energy Capability Specified at 100°C
• Commutating Safe Operating Area (CSOA) Specified for Use in Half and Full Bridge Circuits
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits

MTP10N10E datasheet

MTP10N10E
PDF/DataSheet Download

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