Purchase MTP10N10EL, In-stock MTP10N10EL From SeekIC.
Part Number: MTP10N10EL
Description: This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new ener...
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MTP10N10EL
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DataSheet
General Description
MTP10N10EL General Description
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTP10N10EL Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
100 |
Vdc |
| DraintoGate Voltage (RGS =1.0 M) |
VDGR |
100 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
±15 ±20 |
Vdc VPK |
| Drain Current - Continuous@ TC = 25°C - Continuous@ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
10 6.0 35 |
Adc Apk |
| Total Power Dissipation @ TC = 25°C Derate above 25°C |
PD |
40 0.32 1.75 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25 Vdc, VGS =5.0Vdc IL =10 Apk L =1.0mH, RG = 25 |
EAS |
50 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient (1) |
RJC RJA RJA |
3.13 100 71.4 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
MTP10N10EL Features
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
MTP10N10EL
PDF/DataSheet Download
- Datasheet: MTP10N10EL
- File Size: 226684 KB
- Manufacturer: MOTOROLA [Motorola, Inc]
- Click here to Download
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