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MTP10N40E

Specifications Parameter Symbol Value Unit DraintoSource Voltage VDSS 60 Vdc DraintoGate Voltage (RGS = 1.0 M) VDGR 60 Vdc GateSource Voltage - ContinuousGateSource Voltage - Nonrepetitive VGSVGSM ±20±40 VdcVpk Drain Current - ContinuousDrai...

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MTP10N40E: Specifications Parameter Symbol Value Unit DraintoSource Voltage VDSS 60 Vdc DraintoGate Voltage (RGS = 1.0 M) VDGR 60 Vdc GateSource Voltage - ContinuousG...

MTP10N40E Data Sheet

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Part Number:
MTP10N40E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Parameter
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GateSource Voltage - Continuous
GateSource Voltage - Nonrepetitive
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current - Continuous
Drain Current - Pulsed
ID
IDM
10
40
Adc
Total Power Dissipation
Derate above 25°C
PD
1.25
1.0
Watts
W/°C
Operating and Storage Temperature Range
TJ,Tstg
55 to 150
°C



Description

The MTP10N40E is designed to withstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. MTP10N40E specifications:
• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode




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