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MFG:MOTOROLA  Package Cooled:02+  D/C:220  

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Part Number: MTP12N06

 

MFG: MOTOROLA

Package Cooled: 02+

D/C: 220

Description: This advanced TMOS power FET is designed to withstand high energy in the avalanche mode and switch efficiently. This ne...


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MTP12N06 General Description


This advanced TMOS power FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a gatetosource zener diode designed for 4 kV ESD protection (human body model).

MTP12N06 Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS =1.0 M)
VDGR
60
Vdc
GatetoSource Voltage
- Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
±15
±20
Vdc
VPK
Drain Current
- Continuous
- Continuous@ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
12
7.1
36
Adc

Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
45
0.36
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =25 Vdc, VGS =5.0Vdc IL =12 Apk L =1.0mH, RG = 25
EAS
72
mJ
Thermal Resistance
- Junction to Case
- Junction to Ambient
RJC
RJA
2.78
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

MTP12N06 Features

• ESD Protected
• 4 kV Human Body Model
• 400 V Machine Model
• Avalanche Energy Capability
• Internal SourceToDrain Diode Designed to Replace External Zener Transient SuppressorAbsorbs High Energy in the Avalanche Mode

MTP12N06 datasheet

MTP12N06
PDF/DataSheet Download

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