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MFG:ON  D/C:06+  

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Part Number: MTP12P10

 

MFG: ON

 

D/C: 06+

Description: This TMOS Power FET is designed for medium voltage, high speed power switching applications such as sw...


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MTP12P10 General Description


This TMOS Power FET is designed for medium voltage, high speed power switching applications such as switching regulators,converters, solenoid and relay drivers.• Silicon Gate for Fast Switching Speeds - Switching Times Specified at 100°C
• Designer's Data - IDSS, VDS(on), VGS(th) and SOA Specified at Elevated Temperature
• Rugged - SOA is Power Dissipation Limited
• SourcetoDrain Diode Characterized for Use With Inductive Loads

MTP12P10 Maximum Ratings

Parameter
Symbol
Value
Unit
DraintoSource Voltage
VDSS
100
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
100
Vdc
GateSource Voltage - Continuous
- Nonrepetitive(tp 50 s)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current - Continuous
Drain Current - Pulsed
ID
IDM
12
28
Adc
Total Power Dissipation
Derate above 25°C
PD
75
0.6
Watts
W/°C
Operating and Storage Temperature Range
TJ,Tstg
65 to 150
°C

MTP12P10 datasheet

MTP12P10
PDF/DataSheet Download

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