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MFG:ON D/C:06+


Part Number: MTP12P10
MFG: ON
D/C: 06+
Description: This TMOS Power FET is designed for medium voltage, high speed power switching applications such as sw...
MFG:ON D/C:06+


MFG: ON
D/C: 06+
Description: This TMOS Power FET is designed for medium voltage, high speed power switching applications such as sw...
This TMOS Power FET is designed for medium voltage, high speed power switching applications such as switching regulators,converters, solenoid and relay drivers.• Silicon Gate for Fast Switching Speeds - Switching Times Specified at 100°C
• Designer's Data - IDSS, VDS(on), VGS(th) and SOA Specified at Elevated Temperature
• Rugged - SOA is Power Dissipation Limited
• SourcetoDrain Diode Characterized for Use With Inductive Loads
|
Parameter |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
100 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
100 |
Vdc |
| GateSource Voltage - Continuous - Nonrepetitive(tp 50 s) |
VGS VGSM |
±20 ±40 |
Vdc Vpk |
| Drain Current - Continuous Drain Current - Pulsed |
ID IDM |
12 28 |
Adc |
| Total Power Dissipation Derate above 25°C |
PD |
75 0.6 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ,Tstg |
65 to 150 |
°C |
MTP12P10
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