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MFG:ON  Package Cooled:TO-220  D/C:08+  

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Part Number: MTP1306

 

MFG: ON

Package Cooled: TO-220

D/C: 08+

Description: This advanced highcell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation m...


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MTP1306 General Description


This advanced highcell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.

MTP1306 Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
300
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
300
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 20
Vdc
Vpk
Drain Current - Continuous
- Continuous @ @TC=100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
75
59
225
Adc

Apk

Total Power Dissipation
Derate above 25°C
PD
150
1.2
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 175
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =25Vdc,VGS = 10Vdc, Vdc,Peak IL =75Apk, L = 0.1mH, RG = 25)
EAS
280
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
RJC
RJA
0.8
62.5
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
EFET and HDTMOS are trademarks of Motorola, Inc.

MTP1306 Features

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature

MTP1306 datasheet

MTP1306
PDF/DataSheet Download

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