Purchase MTP156M00691D, In-stock MTP156M00691D From SeekIC.
- Table of contents:
MTP156M00691D
-
Suppliers
DataSheet
General Description
MTP156M00691D Features
• Maximum CV/Unit volume
• Ruggedized construction
• Low dissipation factor
• Low DC leakage
• 100% 25°C DCL screening
• 100% voltage age @ 85°C - 8 hours
• 100% cap & DF screening
• Ruggedized construction
• Low dissipation factor
• Low DC leakage
• 100% 25°C DCL screening
• 100% voltage age @ 85°C - 8 hours
• 100% cap & DF screening
MTP156M00691D Typical Application
• Timing Circuits
• Filter Coupling
• Energy Storage
• By-Pass Circuits
• Filter Coupling
• Energy Storage
• By-Pass Circuits
MTP156M00691D
PDF/DataSheet Download
- Datasheet: MTP156M00691D
- File Size: 89864 KB
- Manufacturer: VISAY [Vishay Siliconix]
- Click here to Download
- ·MTP 3-Phase Rectifier Series
- THREE PHASE BRIDGE Power Module
- 124897 KB
- ·MTP10N06
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 11 A, 60-100 V
- 170679 KB
- ·MTP10N10
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 11 A, 60-100 V
- 170679 KB
- ·MTP10N10E
- MOTOROLA [Motorola, Inc]
- TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM
- 243664 KB
- ·MTP10N10E/D
- TMOS POWER FETs 10 AMPERES 100 VOLTS
- 208450 KB
- ·MTP10N10EL
- MOTOROLA [Motorola, Inc]
- TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS
- 226684 KB
- ·MTP10N10EL/D
- TMOS POWER FET 10 AMPERES 100 VOLTS
- 226684 KB
- ·MTP10N15
- MOTOROLA [Motorola, Inc]
- POWER FIELD EFFECT TRANSISTOR
- 174376 KB
MTP156M00691D Relative Products
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MTP12N06EZL
MTP12N06
The MTP12N06is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a gatetosource zener diode designed for 4 kV ESD protection (human body model).
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