Purchase MTP15N06V, In-stock MTP15N06V From SeekIC.
MFG:PI D/C:TO-220
Part Number: MTP15N06V
MFG: PI
D/C: TO-220
Description: TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of stan...
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MTP15N06V
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DataSheet
General Description
MTP15N06V General Description
TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTP15N06V Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
60 |
Vdc |
| DraintoGate Voltage (RGS =1.0 M) |
VDGR |
60 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 50 ms) |
VGS VGSM |
± 20 ± 25 |
Vdc VPK |
| Drain Current - Continuous@ 25°C - Continuous@ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
15 8.7 45 |
Adc Apk |
| Total Power Dissipation@ 25°C Derate above 25°C |
PD |
55 0.5 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25 Vdc, VGS =10Vdc, PEAK IL =15 Apk, L =1.0H, RG = 25) |
EAS |
113 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
2.73 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET, Designer's and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
MTP15N06V Features
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
MTP15N06V
PDF/DataSheet Download
- Datasheet: MTP15N06V
- File Size: 167919 KB
- Manufacturer: MOTOROLA [Motorola, Inc]
- Click here to Download
- ·MTP 3-Phase Rectifier Series
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- TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM
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- ·MTP10N10EL/D
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