Position: Home > Datasheet list > MTP Series > Index M > MTP1N80E
Electronica China

Purchase MTP1N80E, In-stock MTP1N80E From SeekIC.

MFG:ON  Package Cooled:05+  D/C:TO-220  

MTP1N80E Product Image

MTP Series Datasheet download

Five Points

Part Number: MTP1N80E

 

MFG: ON

Package Cooled: 05+

D/C: TO-220

Description: This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capab...


Urgent Purchase

MTP1N80E General Description


This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTP1N80E Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
800
Vdc
DraintoGate Voltage (RGS =1.0 M)
VDGR
800
Vdc
GatetoSource Voltage
- Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 40
Vdc
VPK
Drain Current
- Continuous
- Continuous@ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
1.0
0.8
3.0
Adc

Apk
Total Power Dissipation
Derate above 25°C
PD
48
0.38
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =100 Vdc, VGS =10Vdc IL =2.0 Apk L =10mH, RG = 25
EAS
20
mJ
Thermal Resistance
- Junction to Case
- Junction to Ambient
RJC
RJA
2.63
62.5
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

MTP1N80E Features

• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature

MTP1N80E datasheet

MTP1N80E
PDF/DataSheet Download

Find MTP1N80E Suppliers

  • ·MTP 3-Phase Rectifier Series
  •  
  • THREE PHASE BRIDGE Power Module 
  • 124897 KB
  • MTP 3-Phase Rectifier Series Datasheet Download
  • ·MTP10N06
  • FAIRCHILD [Fairchild Semiconductor] 
  • N-Channel Power MOSFETs, 11 A, 60-100 V 
  • 170679 KB
  • MTP10N06 Datasheet Download
  • ·MTP10N10
  • FAIRCHILD [Fairchild Semiconductor] 
  • N-Channel Power MOSFETs, 11 A, 60-100 V 
  • 170679 KB
  • MTP10N10 Datasheet Download
  • ·MTP10N10E
  • MOTOROLA [Motorola, Inc] 
  • TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM 
  • 243664 KB
  • MTP10N10E Datasheet Download
  • ·MTP10N10E/D
  •  
  • TMOS POWER FETs 10 AMPERES 100 VOLTS 
  • 208450 KB
  • MTP10N10E/D Datasheet Download
  • ·MTP10N10EL
  • MOTOROLA [Motorola, Inc] 
  • TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS 
  • 226684 KB
  • MTP10N10EL Datasheet Download
  • ·MTP10N10EL/D
  •  
  • TMOS POWER FET 10 AMPERES 100 VOLTS 
  • 226684 KB
  • MTP10N10EL/D Datasheet Download
  • ·MTP10N15
  • MOTOROLA [Motorola, Inc] 
  • POWER FIELD EFFECT TRANSISTOR 
  • 174376 KB
  • MTP10N15 Datasheet Download

Related Part Number

MTP1N80E Relative Products

  • MTP1N60E

    MTP1N60E

    The MTP1N60Euses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, the MTP1N60Eis designed to withstand high energy in the avalanche and commutation modes. The new energy effic...

  • MTP1N50E

    MTP1N50E

    The MTP1N50Euses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, the MTP1N50Eis designed to withstand high energy in the avalanche and commutation modes. The new energy effic...

  • MTP1N100E

    MTP1N100E

    The MTP1N100Euses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The MTP...

  • MTP1H-E6-C

    MTP1H-E6-C

    MULTIPLE TIE PLATE

  • MTP1H-E10-C

    MTP1H-E10-C

    MULTIPLE TIE PLATE

  • MTP16N25E

    MTP16N25E

    The MTP16N25Eis designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power suppli...

Hotspot Suppliers Product

Product List

  • Models: 0874210000 Price: 0.5-2 USD

    0874210000

    Price: 0.5-2 USD

    1.50mm (.059”), Pico-SPOX Crimp Terminal, Female, Tin(Sn), 24-30 AWG, Reel

  • Models: HEF4001BP Price: 1-2 USD

    HEF4001BP

    Price: 1-2 USD

    quadruple 2-input NOR gate, DIP, -0.5 to +18 V, Fully static operation, 50 mA, 100 mW, NXP Semicon...

  • Models: EP1S20F672C7N Price: 94-94.5 USD

    EP1S20F672C7N

    Price: 94-94.5 USD

    BGA, 928,440 bytes, FPGA, 1.5-V, 0.13-μm, 12 PLLs, DSP applications, 420-MHz performance

  • Models: SKKT92/16E Price: 20-30 USD

    SKKT92/16E

    Price: 20-30 USD

    diode module, 1700V, heat transfer, hard soldered joints, UL recognized, SKKT92/16E

  • Models: BD912 Price: 0.175-0.18 USD

    BD912

    Price: 0.175-0.18 USD

    silicon Epitaxial-Base, NPN power transistor, TO-220, 100V, 90W, 15A

  • Models: G6RL-1 Price: 4-5 USD

    G6RL-1

    Price: 4-5 USD

    power relay, Low-profile, 2,500 VA, 10 to 55 to 10 Hz, RoHS Compliant

  • Models: SMCJ36A Price: 0.054-0.0635 USD

    SMCJ36A

    Price: 0.054-0.0635 USD

    1500W, surface mount, Unidirectional transient voltage, suppressor, 36V, DO-214AB/SMC, 5%

  • Models: FAN4803CP1 Price: 0.6-2 USD

    FAN4803CP1

    Price: 0.6-2 USD

    controller, DIP, -5V to 1V

  • Models: MC34063API Price: 1-2 USD

    MC34063API

    Price: 1-2 USD

    MC34063API

  • Models: A316J Price: 1.25-1.75 USD

    A316J

    Price: 1.25-1.75 USD

    2.0 Amp, Gate Drive Optocoupler, SOP-16, -0.5 to 5.5 Volts, 150mW

  • Models: AT45DB161D-TU Price: 0.9-1.5 USD

    AT45DB161D-TU

    Price: 0.9-1.5 USD

    Flash memory, TSSOP, -0.6V to +6.25V

  • Models: L2A1010-MN4C4NFLA Price: 10-50 USD

    L2A1010-MN4C4NFLA

    Price: 10-50 USD

    L2A1010-MN4C4NFLA, LSI Computer Systems, QFP44, Integrated Circuits

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All