Position: Home > Datasheet list > MTP Series > Index M > MTP27N10E
Electronica China

Purchase MTP27N10E, In-stock MTP27N10E From SeekIC.

MFG:MOTOROLA  Package Cooled:00+  D/C:220  

MTP27N10E Product Image

MTP Series Datasheet download

Five Points

Part Number: MTP27N10E

 

MFG: MOTOROLA

Package Cooled: 00+

D/C: 220

Description: This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation mod...


Urgent Purchase

MTP27N10E General Description


This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTP27N10E Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
100
Vdc
DraintoGate Voltage (RGS =1.0 M)
VDGR
100
Vdc
GatetoSource Voltage
- Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 40
Vdc
VPK
Drain Current
- Continuous@ 25°C
- Continuous@ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
27
17
95
Adc

Apk
Total Power Dissipation @ 25°C
Derate above 25°C
PD
104
0.83
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =75 Vdc, VGS =10Vdc,PeakIL =27 Apk L =0.3mH, RG = 25
EAS
109
mJ
Thermal Resistance
- Junction to Case
- Junction to Ambient
RJC
RJA
1.2
62.5
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

MTP27N10E Features

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Device Marking: MTP27N10E

MTP27N10E datasheet

MTP27N10E
PDF/DataSheet Download

Find MTP27N10E Suppliers

  • ·MTP 3-Phase Rectifier Series
  •  
  • THREE PHASE BRIDGE Power Module 
  • 124897 KB
  • MTP 3-Phase Rectifier Series Datasheet Download
  • ·MTP10N06
  • FAIRCHILD [Fairchild Semiconductor] 
  • N-Channel Power MOSFETs, 11 A, 60-100 V 
  • 170679 KB
  • MTP10N06 Datasheet Download
  • ·MTP10N10
  • FAIRCHILD [Fairchild Semiconductor] 
  • N-Channel Power MOSFETs, 11 A, 60-100 V 
  • 170679 KB
  • MTP10N10 Datasheet Download
  • ·MTP10N10E
  • MOTOROLA [Motorola, Inc] 
  • TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM 
  • 243664 KB
  • MTP10N10E Datasheet Download
  • ·MTP10N10E/D
  •  
  • TMOS POWER FETs 10 AMPERES 100 VOLTS 
  • 208450 KB
  • MTP10N10E/D Datasheet Download
  • ·MTP10N10EL
  • MOTOROLA [Motorola, Inc] 
  • TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS 
  • 226684 KB
  • MTP10N10EL Datasheet Download
  • ·MTP10N10EL/D
  •  
  • TMOS POWER FET 10 AMPERES 100 VOLTS 
  • 226684 KB
  • MTP10N10EL/D Datasheet Download
  • ·MTP10N15
  • MOTOROLA [Motorola, Inc] 
  • POWER FIELD EFFECT TRANSISTOR 
  • 174376 KB
  • MTP10N15 Datasheet Download

Related Part Number

MTP27N10E Relative Products

  • MTP25N10E

    MTP25N10E

    This advanced MTP25N10E series of TMOS power MOSFETs is designed for withstand high energy in th avalanche and communication modes. These new energy efficient devices also offer drian-tosource diodes with fast recovery times. Designed for low voltage, high s...

  • MTP23P06V

    MTP23P06V

    MTP23P06V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, MTP2...

  • MTP20N20E

    MTP20N20E

    The MTP20N20Eis designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power suppli...

  • MTP20N20

    MTP20N20

    The MTP20N20is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplie...

  • MTP20N15EG

    MTP20N15EG

    MOSFET N-CH 150V 20A TO220AB

  • MTP20N15E

    MTP20N15E

    The MTP20N15Eis designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power converters...

Hotspot Suppliers Product

Product List

  • Models: G5V-2 24V Price: 2.5-3.6 USD

    G5V-2 24V

    Price: 2.5-3.6 USD

    Electromechanical Relay, DPDT 1A 24VDC, Through Hole

  • Models: STA540SA Price: 1-1.5 USD

    STA540SA

    Price: 1-1.5 USD

    SIP19, 4 x 13 W, dual/quad power amplifier, Supply Voltage 20 V, Total Power Dissipation 35 W

  • Models: 2SC1815-GR Price: 0.0126-0.02 USD

    2SC1815-GR

    Price: 0.0126-0.02 USD

    TO-92, audio frequency amplifier, high frequency, OSC NPN transistor, 150 mA, 400 mW, 60 V

  • Models: EL2120CS Price: 1-3 USD

    EL2120CS

    Price: 1-3 USD

    feedback amplifier, SO-8 package, 20 MHz

  • Models: RTL8019AS Price: 1.48-1.6 USD

    RTL8019AS

    Price: 1.48-1.6 USD

    Ethernet Controller, Plug and Play NE2000, full-duplex

  • Models: MDR774M-T Price: 0.03-0.08 USD

    MDR774M-T

    Price: 0.03-0.08 USD

    MDR774M-T, Integrated Circuits, SOSHIN electric co.,ltd

  • Models: TA8104F Price: 0.45-0.85 USD

    TA8104F

    Price: 0.45-0.85 USD

    TOSHIBA, TA8104F, SOP-16, 5V VOLTAGE REGULATOR

  • Models: STP10NK60ZFP Price: 1-2 USD

    STP10NK60ZFP

    Price: 1-2 USD

    N-channel 600V, 0.65OHM, 10A, TO-220/FP, Zener-protected, SuperMESH Power MOSFET

  • Models: DS18B20 Price: 0.6-0.85 USD

    DS18B20

    Price: 0.6-0.85 USD

    TO-92, -0.5V to +6.0V, 64-bit serial code, 750ms, Digital Thermometer

  • Models: L2800-38 Price: 2.5-3 USD

    L2800-38

    Price: 2.5-3 USD

    Microcontroller, 8-Bit, QFP-80, Full-duplex speakerphone (FDSP) mode, +5V operation

  • Models: KB926QFD3 Price: 1-1.5 USD

    KB926QFD3

    Price: 1-1.5 USD

    QFP, KB926QFD3, KB926QFD3

  • Models: CC0603JRNPO8BN102 Price: 0.01-1 USD

    CC0603JRNPO8BN102

    Price: 0.01-1 USD

    surface-mount ceramic, multilayer capacitor, RoHS compliant, 0.5 pF, 10 GΩ

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All