Position: Home > Datasheet list > MTP Series > Index M > MTP29N15E
Electronica China

Purchase MTP29N15E, In-stock MTP29N15E From SeekIC.

MFG:ON  Package Cooled:05+  D/C:TO-220  

MTP29N15E Product Image

MTP Series Datasheet download

Five Points

Part Number: MTP29N15E

 

MFG: ON

Package Cooled: 05+

D/C: TO-220

Description: This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. T...


Urgent Purchase

MTP29N15E General Description


This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTP29N15E Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
150
Vdc
DraintoGate Voltage (RGS =1.0 M)
VDGR
150
Vdc
GatetoSource Voltage
- Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 400
Vdc
VPK
Drain Current
- Continuous
- Continuous@ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
29
19
102
Adc

Apk
Total Power Dissipation
Derate above 25°C
PD
125
1.0
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =25 Vdc, VGS =10Vdc,PeakIL =29 Apk L =1.0mH, RG = 25
EAS
421
mJ
Thermal Resistance
- Junction to Case
- Junction to Ambient
RJC
RJA
1.0
62.5
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

MTP29N15E Features

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature

MTP29N15E datasheet

MTP29N15E
PDF/DataSheet Download

Find MTP29N15E Suppliers

  • ·MTP 3-Phase Rectifier Series
  •  
  • THREE PHASE BRIDGE Power Module 
  • 124897 KB
  • MTP 3-Phase Rectifier Series Datasheet Download
  • ·MTP10N06
  • FAIRCHILD [Fairchild Semiconductor] 
  • N-Channel Power MOSFETs, 11 A, 60-100 V 
  • 170679 KB
  • MTP10N06 Datasheet Download
  • ·MTP10N10
  • FAIRCHILD [Fairchild Semiconductor] 
  • N-Channel Power MOSFETs, 11 A, 60-100 V 
  • 170679 KB
  • MTP10N10 Datasheet Download
  • ·MTP10N10E
  • MOTOROLA [Motorola, Inc] 
  • TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM 
  • 243664 KB
  • MTP10N10E Datasheet Download
  • ·MTP10N10E/D
  •  
  • TMOS POWER FETs 10 AMPERES 100 VOLTS 
  • 208450 KB
  • MTP10N10E/D Datasheet Download
  • ·MTP10N10EL
  • MOTOROLA [Motorola, Inc] 
  • TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS 
  • 226684 KB
  • MTP10N10EL Datasheet Download
  • ·MTP10N10EL/D
  •  
  • TMOS POWER FET 10 AMPERES 100 VOLTS 
  • 226684 KB
  • MTP10N10EL/D Datasheet Download
  • ·MTP10N15
  • MOTOROLA [Motorola, Inc] 
  • POWER FIELD EFFECT TRANSISTOR 
  • 174376 KB
  • MTP10N15 Datasheet Download

MTP29N15E Relative Products

  • MTP2955V

    MTP2955V

    The MTP2955Vhas been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. TheMTP2955V feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. ...

  • MTP2955E

    MTP2955E

    The MTP2955E is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power suppli...

  • MTP2955

    MTP2955

    MTP2955 is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, MTP295...

  • MTP27N10E

    MTP27N10E

    The MTP27N10Eis designed to withstand high energy in the avalanche and commutation modes. The MTP27N10Ealso offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and ...

  • MTP25N10E

    MTP25N10E

    This advanced MTP25N10E series of TMOS power MOSFETs is designed for withstand high energy in th avalanche and communication modes. These new energy efficient devices also offer drian-tosource diodes with fast recovery times. Designed for low voltage, high s...

  • MTP23P06V

    MTP23P06V

    MTP23P06V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, MTP2...

Hotspot Suppliers Product

  • Models: TDA1517P
Price: 0.5-1 USD

    TDA1517P

    Price: 0.5-1 USD

    DIP18, 2 x 6 W stereo, power amplifier, integrated class-B, High output power, Fixed gain

  • Models: KG057QV1CB-G00
Price: 0.1-1 USD

    KG057QV1CB-G00

    Price: 0.1-1 USD

    5.7 inch, LCD module, 137.0mW, Symmetrical Design, 10:1 Contrast Ratio

  • Models: ADS7846E
Price: 1.8-2.8 USD

    ADS7846E

    Price: 1.8-2.8 USD

    touch screen controller, SSOP16, 2.2V to 5.25V operation, internal 2.5V reference, auto power-down

  • Models: LM324N
Price: 0.08-0.1 USD

    LM324N

    Price: 0.08-0.1 USD

    quad op amp, 14DIP, 1MHz, 3VDC to 30VDC , 5nADC, STMicroelectronics

  • Models: FF600R06ME3
Price: 10-300 USD

    FF600R06ME3

    Price: 10-300 USD

    FF600R06ME3 IGBT Modules up to 600V / 650V dual - Infineon Technologies

  • Models: RHRG30120
Price: 1-2 USD

    RHRG30120

    Price: 1-2 USD

    30A, 1200V, Hyperfast Diode, TO-247-2 , soft recovery, low stored charge

  • Models: LT1021CCN8-5
Price: 0.5-1.6 USD

    LT1021CCN8-5

    Price: 0.5-1.6 USD

    precision reference, DIP-8, 40V, 100% Noise Tested, Very Low Noise

  • Models: INA122PA
Price: 2.38-2.94 USD

    INA122PA

    Price: 2.38-2.94 USD

    DIP-8, single supply, micropower, instrumentation amplifier, low noise, 60mA, 2.2V to 36V

  • Models: 74HCT595D
Price: 0.55-0.6 USD

    74HCT595D

    Price: 0.55-0.6 USD

    Si-gate CMOS device, SOP-16, -0.5 to +7.0 V, 8-bit serial input, high-speed

  • Models: MC-5781C
Price: 15-20 USD

    MC-5781C

    Price: 15-20 USD

    MC-5781C, Okuma, Integrated Circuits (ICs), ZIP-16

  • Models: KU80C186EC20
Price: 11-14 USD

    KU80C186EC20

    Price: 11-14 USD

    16-bit, high-integration embedded processor, QFP, -0.5V to 6.5V, On-Chip Oscillator, Ten Programma...

  • Models: ILX514
Price: 6.5-7 USD

    ILX514

    Price: 6.5-7 USD

    reduction type, CCD linear sensor, CDIP, 11V, 3918 pixels, Single output method, 5MHz

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All