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MFG:MOTOROLA  Package Cooled:02+  D/C:220  

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Part Number: MTP2N60E

 

MFG: MOTOROLA

Package Cooled: 02+

D/C: 220

Description: This high voltage MOSFET uses an advanced termination scheme to provideenhanced voltageblocking ...


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MTP2N60E General Description


This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies,converters and PWM motor controls, these devices are particularly well suite for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature

MTP2N60E Maximum Ratings

Rating
Symbol
Value
Unit
DrainSource Voltage
VGSS
600
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
600
Vdc
GateSource Voltage
- Continuous
- Single Pulse (tp50 s)

VGS
VGSM

±20
±40


Vdc
Vpk

Drain - Continuous
- Single Pulse(tp10 s)
ID
IDM
2.0
9.0

Adc

Total Power Dissipation
Derate above 25°C
PD
50
0.4
Watts
W/°C
Operating and Storage Temperature Range
TJ,Tstg
55 to 150
°C
Single DraintoSource Avalanche
Energy - Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, L = 95 mH, RG = 25 , Peak IL = 2.0 Adc)
EAS
190
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
RJC
RJA
2.5
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds
TL
260
°C

MTP2N60E datasheet

MTP2N60E
PDF/DataSheet Download

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