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MTP3055V

MOSFET N-Channel FET Enhancement Mode

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SeekIC No. : 00162917 Detail

MTP3055V: MOSFET N-Channel FET Enhancement Mode

MTP3055V Data Sheet

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Part Number:
MTP3055V
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 0.15 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 12 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.15 Ohms


Parameters:

Technical/Catalog InformationMTP3055V
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs150 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 500pF @ 25V
Power - Max48W
PackagingTube
Gate Charge (Qg) @ Vgs17nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MTP3055V
MTP3055V
MTP3055VFS ND
MTP3055VFSND
MTP3055VFS



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