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MFG:MOTOROLA  Package Cooled:02+  D/C:220  

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Part Number: MTP4N50E

 

MFG: MOTOROLA

Package Cooled: 02+

D/C: 220

Description: This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently....


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MTP4N50E General Description


This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

MTP4N50E Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
500
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
500
Vdc
GatetoSource Voltage
- Continuous
- Nonrepetitive
VGS
VGSM
± 20
±40
Vdc
Vpk
Drain Current
- Continuous
- Pulsed
ID
IDM
4.0
10
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
75
0.6
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C

MTP4N50E Features

• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode

MTP4N50E datasheet

MTP4N50E
PDF/DataSheet Download

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