MTP4N50E

Features:

• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	500	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	500	Vdc
GatetoSource Voltage - Continuous - Nonrepetitive	VGS VGSM	± 20 ±40	Vdc Vpk
Drain Current - Continuous - Pulsed	ID IDM	4.0 10	Adc
Total Power Dissipation @ TC = 25°C Derate above 25°C	PD	75 0.6	Watts W/°C
Operating and Storage Temperature Range	TJ, Tstg	55 to 150	°C

Description

This advanced high voltage MTP4N50E is designed to withstand high energy in the avalanche mode and switch efficiently. The MTP4N50E is high energy device which also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.