Purchase MTP4N80, In-stock MTP4N80 From SeekIC.
Part Number: MTP4N80
Description: This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without deg...
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MTP4N80
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DataSheet
General Description
MTP4N80 General Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTP4N80 Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
800 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
800 |
Vdc |
| GatetoSource - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc VPK |
| Drain Current - Continuous - Continuous@ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
4.0 2.9 12 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
125 1.0 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =100 Vdc, VGS = 10Vdc, PEAK IL =8.0Apk, L =10mH, RG = 25) |
EAS |
320 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
1.0 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
MTP4N80 Features
• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
MTP4N80
PDF/DataSheet Download
- Datasheet: MTP4N80
- File Size: 162930 KB
- Manufacturer: MOTOROLA [Motorola, Inc]
- Click here to Download
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