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MFG:MOT  Package Cooled:01+  D/C:TO-220  

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Part Number: MTP50N06

 

MFG: MOT

Package Cooled: 01+

D/C: TO-220

Description: TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. Thi...


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MTP50N06 General Description


TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTP50N06 Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GatetoSource Voltage
- Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 15
± 20
Vdc
VPK
Drain Current
- Continuous @ 25°C
- Continuous@ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
42
30
147
Adc

Apk
Total Power Dissipation
Derate above 25°C
PD
125
0.83
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 175
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =25 Vdc, VGS = 5Vdc, PEAK IL =42Apk, L =0.3mH, RG = 25)
EAS
265
mJ
Thermal Resistance
- Junction to Case
- Junction to Ambient
RJC
RJA
1.2
62.5
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET, Designer's and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

MTP50N06 Features

• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET

MTP50N06 datasheet

MTP50N06
PDF/DataSheet Download

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