Purchase MTP50N06EL, In-stock MTP50N06EL From SeekIC.
D/C:DC/0418+
Part Number: MTP50N06EL
D/C: DC/0418+
Description: This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy eff...
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MTP50N06EL
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DataSheet
General Description
MTP50N06EL General Description
This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTP50N06EL Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
60 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 15 ± 30 |
Vdc VPK |
| Drain Current - Continuous - Continuous@ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
50 38 160 |
Adc Apk |
| Total Power Dissipation TC = 25°C Derate above 25°C |
PD |
150 1.0 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25 Vdc, VGS = 5.0Vdc, PEAK IL =50 Apk, L =0.32H, RG = 25) |
EAS |
100 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
1.0 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
MTP50N06EL Features
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
MTP50N06EL
PDF/DataSheet Download
- Datasheet: MTP50N06EL
- File Size: 238055 KB
- Manufacturer: MOTOROLA [Motorola, Inc]
- Click here to Download
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MTP50N06EL Relative Products
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MTP4N50E
This advanced high voltage MTP4N50E is designed to withstand high energy in the avalanche mode and switch efficiently. The MTP4N50E ishigh energy device which also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed sw...
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