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MFG:FRE Package Cooled:TO
Part Number: MTW6N100
MFG: FRE
Package Cooled: TO
Description: This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capab...
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MTW6N100
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DataSheet
General Description
MTW6N100 General Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTW6N100 Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
1000 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
1000 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
6.0 4.2 18 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
180 1.43 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =50Vdc,VGS = 10Vdc, Vdc,Peak IL =6.0 Apk, L =27.77 mH, RG = 25) |
EAS |
720 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
0.70 40 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
MTW6N100 Features
• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware
MTW6N100
PDF/DataSheet Download
- Datasheet: MTW6N100
- File Size: 200046 KB
- Manufacturer: MOTOROLA [Motorola, Inc]
- Click here to Download
- ·MTW10N100E
- MOTOROLA [Motorola, Inc]
- TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
- 196812 KB
- ·MTW10N100E/D
- TMOS POWER FET 10 AMPERES 1000 VOLTS
- 170640 KB
- ·MTW10N40E
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- TMOS E-FET POWER FIELD EFFECT TRANSISTOR
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- ·MTW14N50E
- MOTOROLA [Motorola, Inc]
- TMOS POWER FET 14 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
- 210239 KB
- ·MTW14N50E/D
- TMOS POWER FET 14 AMPERES 500 VOLTS
- 196812 KB
- ·MTW16N40E
- MOTOROLA [Motorola, Inc]
- TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM
- 222592 KB
- ·MTW16N40E/D
- TMOS POWER FET 16 AMPERES 400 VOLTS
- 192554 KB
- ·MTW20N50E
- MOTOROLA [Motorola, Inc]
- TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM
- 198381 KB
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