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MTW6N100E

Features: • Robust High Voltage Termination• Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Temperature• Isolat...

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SeekIC No. : 004431008 Detail

MTW6N100E: Features: • Robust High Voltage Termination• Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterize...

MTW6N100E Data Sheet

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Part Number:
MTW6N100E
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/13

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Product Details

Description



Features:

• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a
  Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware


Specifications

Rating Symbol Value Unit
DraintoSource Voltage VDSS 1000 Vdc
DraintoGate Voltage (RGS = 1.0 MW) VDGR 1000 Vdc
GatetoSource Voltage - Continuous
 VGS
VGSM
 ± 20
± 40 		Vdc
Vpk
Drain Current - Continuous
Drain Current - Continuous @ 100°C
Drain Current - Single Pulse (tp 3 10 ms)
ID
ID
IDM		 6.0
4.2
18		 Adc
Apk
Total Power Dissipation
Derate above 25°C
PD		 180
1.43		 Watts
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 5.0 mH, RG = 25)		 EAS 720 mJ
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient		 RqJC
RqJA		 0.70
40		 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds TL 260 °C
Operating and Storage Temperature Range TJ, Tstg 55 to 150 °C



Description

This MTW6N100E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these MTW6N100E are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.




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