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MFG:MOTOROLA  Package Cooled:TO  

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Part Number: MTY10N100E

 

MFG: MOTOROLA

Package Cooled: TO

 

Description: This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capab...


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MTY10N100E General Description


This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage and high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTY10N100E Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
100
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
100
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current - Continuous @ Tc = 25°C
- Single Pulse (tp 10 s)
ID
IDM
10
30
Amps
Total Power Dissipation
Derate above 25°C
PD
250
2.0
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =100Vdc,VGS = 10Vdc, Vdc,Peak IL =10 Apk, L =10 mH, RG = 25)
EAS
500
mJ
Thermal Resistance
- Junction to Case
- Junction to Ambient
RJC
RJA
0.5
30
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.

MTY10N100E Features

• Robust High Voltage Termination
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature

MTY10N100E datasheet

MTY10N100E
PDF/DataSheet Download

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