MTY100N10E

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 100A
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 300W
Gate Charge (Qg) @ Vgs: 378nC @ 10V
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264
Manufacturer: ON Semiconductor
Rds On (Max) @ Id, Vgs: 11 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds: 10640pF @ 25V


Features:

• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	100	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	100	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms)	VGS VGSM	± 20 ± 40	Vdc Vpk
Drain Current - Continuous @ Tc = 25°C - Single Pulse (tp 10 s)	ID IDM	100 300	Adc Apk
Total Power Dissipation Derate above 25°C	PD	300 2.38	Watts W/°C
Operating and Storage Temperature Range	TJ, Tstg	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =80Vdc,VGS = 10Vdc, Vdc,Peak IL =100 Apk, L =0.1 mH, RG = 25)	EAS	500	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	RJC RJA	0.42 40	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	TL	260	°C

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.


Description

This MTY100N10E is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

Parameters:

Technical/Catalog Information	MTY100N10E
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	100A
Rds On (Max) @ Id, Vgs	11 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds	10640pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	378nC @ 10V
Package / Case	TO-264-3, TO-3BPL
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MTY100N10E MTY100N10E MTY100N10EOS ND MTY100N10EOSND MTY100N10EOS