MUN5213DW1T1G

Maximum Operating Frequency :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Packaging : Reel
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 50 V
Continuous Collector Current : 100 mA
Typical Input Resistor : 47 KOhms
Configuration : Dual
Peak DC Collector Current : 100 mA
Typical Resistor Ratio : 1
Package / Case : SOT-363(PB-Free)-6
Power Dissipation : 256 mW


Features:

• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Pb−Free Packages are Available


Specifications

Parameter	Symbol	Value	Units
Collector-Base Voltage Collector-Emitter Voltage Collector Current	VCBO VCEO IC	50 50 100	Vdc Vdc mAdc

Description

The MUN5213DW1T1G BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5213DW1T1G series, two BRT devices are housed in the SOT−363 package which is ideal for low power surface mount applications where board space is at a premium.

Parameters:

Technical/Catalog Information	MUN5213DW1T1G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	2 NPN - Pre-Biased (Dual)
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Power - Max	385mW
Resistor - Base (R1) (Ohms)	47K
Resistor - Emitter Base (R2) (Ohms)	47K
Vce Saturation (Max) @ Ib, Ic	250mV @ 300A, 10mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 10V
Frequency - Transition	-
Mounting Type	Surface Mount
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
Packaging	Digi-Reel?
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MUN5213DW1T1G MUN5213DW1T1G MUN5213DW1T1GOSDKR ND MUN5213DW1T1GOSDKRND MUN5213DW1T1GOSDKR