MW4IC2020NBR1

RF Amplifier 20W 26V EDGE

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SeekIC No. : 00611988 Detail

MW4IC2020NBR1: RF Amplifier 20W 26V EDGE

floor Price/Ceiling Price

US $ 20.28~21.36 / Piece | Get Latest Price
Part Number:
MW4IC2020NBR1
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~358
  • 358~500
  • Unit Price
  • $21.36
  • $20.28
  • Processing time
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Quick Details

Type : Power Amplifier Operating Frequency : 2400 MHz
Maximum Operating Temperature : + 200 C Mounting Style : SMD/SMT
Packaging : Reel    

Description

Noise Figure :
Bandwidth :
Output Intercept Point :
Operating Supply Voltage :
Supply Current :
Package / Case :
Mounting Style : SMD/SMT
Packaging : Reel
Type : Power Amplifier
Maximum Operating Temperature : + 200 C
Operating Frequency : 2400 MHz


Description

The MW4IC2020NBR1 is designed as one kind of 746 to 960 MHz, 30 W, 26 to 28 V RF LDMOS wideband integrated power amplifier with 450 to 1500 MHz, 10 W, 28 V. Features of this device are:(1)capable of handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 watts CW output power; (2)characterized with series equivalent large-signal impedance parameters; (3)on-chip matching (50 ohm input, DC blocked, >4 ohm output); (4)integrated quiescent current temperature compensation with enable/disable function; (5)on-chip current mirror gm reference FET for self biasing application; (6)integrated ESD protection; (7)N suffix indicates lead-free terminations; (8)200 capable plastic package; (9)also available in gull wing for surface mount; (10)in tape and reel. R1 suffix = 500 units per 44 mm, 13 inch reel.

The absolute maximum ratings of the MW4IC2020NBR1 can be summarized as:(1)Drain-Source Voltage: -0.5 to +65 Vdc;(2)Gate-Source Voltage: -0.5 to +15 Vdc;(3)torage Temperature Range: -65 to +175 °C;(4)Operating Junction Temperature: 200 °C;(6)Thermal Resistance, Junction to Case Temperature 80°C, 10 W PEP: 1.4 to 6.5 °C/W.

The electrical characteristics of this MW4IC2020NBR1 can be summarized as:(1)Power Gain: 28 to 31 dB;(2)Power Added Efficiency: 18 to 21 %;(3)Input Return Loss (f = 880 MHz): -12 to -9 dB;(4)Adjacent Channel Power Ratio: -52 to -48 dBc;(5)Part-to-Part Phase Variation @ Pout = 5 W CW: ±15;(6)Delay @ Pout = 5 W CW Including Output Matching: 3 ns;(7)Deviation from Linear Phase in 80 MHz Bandwidth @ Pout = 5 W CW: 0.6;(8)Gain Flatness in 80 MHz Bandwidth @ Pout = 5 W CW: 0.3 dB. If you want to know more information about the MW4IC2020NBR1, please download the datasheet in www.seekic.com or www.chinaicmart.com .




Parameters:

Technical/Catalog InformationMW4IC2020NBR1
VendorFreescale Semiconductor
CategoryRF and RFID
Package / CaseTO-272-16
Voltage - Supply26V
Current - Supply80mA
Gain29dB
Frequency1.6GHz ~ 2.4GHz
RF TypeCellular, GSM, EDGE, CDMA
PackagingTape & Reel (TR)
Noise Figure-
P1db-
Test Frequency-
Drawing Number375; 1329-09; ; 16
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MW4IC2020NBR1
MW4IC2020NBR1



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