MWS11-GB11-X1

DC Supply Voltage, RF off (V_cc) .....................7 Vdc
RF Input Power (Pin) ....................................7 dBm
Operating Case Temperature ............ -30 to +85

Note: Exceeding these ratings could cause damage to the device.

This MWS11-GB11-X1 is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable 50 ohm internally matched gain block. Applications include IF and RF amplification in wireless/wired voice and data communiction products and broadband test equipment operating up to 5 GHz.

This MWS11-GB11-X1 is initially available in a high performance ceramic micro-X package to handle P1dB output power up to 19dBm (5V) and lower powers in an industry-standard SOT- 23 5-lead surface mount package. The same RFIC will be available later in an advanced Microsemi GigamiteTM package with ceramic Micro-X performance but with the cost similar to the SOT-23 plastic package.