MX043G

Features: ` Harris FSC260R die` total dose: 100 kRAD(Si) within pre-radiation parameter limits` dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical` dose rate: 2 x 1012 RAD(Si)/sec @ ID £ IDM typical` neutron: 1013 neutrons/cm2 within pre-radiation parameter limits` photocurrent: 17 nA/RAD(Si)...

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SeekIC No. : 004431503 Detail

MX043G: Features: ` Harris FSC260R die` total dose: 100 kRAD(Si) within pre-radiation parameter limits` dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical` dose rate: 2 x 1012 RAD(Si)/sec @ ID £ IDM ty...

floor Price/Ceiling Price

Part Number:
MX043G
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

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Product Details

Description



Features:

` Harris FSC260R die
` total dose: 100 kRAD(Si) within pre-radiation parameter limits
` dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical
` dose rate: 2 x 1012 RAD(Si)/sec @ ID £ IDM typical
` neutron: 1013 neutrons/cm2 within pre-radiation parameter limits
` photocurrent: 17 nA/RAD(Si)/sec typical
` rated Safe Operating Area Curve for Single event Effects
` rugged polysilicon gate cell structure with ultrafast body diode
` low inductance surface mount power package available with "J-leads" (MX043J) or "gullwing-leads" (MX043G)
` very low thermal resistance
` reverse polarity available upon request add suffix "R"st



Specifications

DESCRIPTION SYMBOL MAX. UNIT
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ 25

BVDSS

200 Volts
Drain-to-Gate Breakdown Voltage @ TJ 25, RGS= 1 M BVDGR 200 Volts
Continuous Gate-to-Source Voltage VGS +/-20 Volts
Transient Gate-to-Source Voltage VGSM +/-30 Volts
Continuous Drain Current Tj= 25
Tj= 100
ID25
ID100
44
28
Amps
Peak Drain Current, pulse width limited by TJmax IDM 132 Amps
Repetitive Avalanche Current IAR
44 Amps
Repetitive Avalanche Energy EAR tbd mJ
Single Pulse Avalanche Energy EAS tbd mJ
Power Dissipation PD 300 Watts
Junction Temperature Range Tj -55 to +125
Storage Temperature Range Tstg -55 to +125
Continuous Source Current (Body Diode) IS 44 Amps
Pulse Source Current (Body Diode) ISM 132 Amps
Thermal Resistance, Junction to Case JC
0.25 /W
Weight -   grams



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